It is known that for a depletion−type n–channel MOSFET , W = 100 μm, L = 10 μm, and VT = –3V. a. At what value should the voltage be set so that this device will be operating in the saturation region ...

Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia.

Diamond is largely recognized as the ideal material in wide bandgap development, but realizing its full potential in field-effect transistors has been challenging. Researchers incorporate a new ...

WASHINGTON, D.C., Oct. 26, 2017 -- Silicon has provided enormous benefits to the power electronics industry. But performance of silicon-based power electronics is nearing maximum capacity. Enter wide ...